Analytical Current Transport Model of Silicene-based TFETs

Abstract

The armchair silicene nanoribbon (ASiNR) has evolved into a stable structure as the channel material in tunnel field-effect transistors (TFET), which has led to their development. When designing an ASiNR with a thickness of 1.4 nm, it is essential to consider a bandgap opening that can be tuned to 0.56 eV. An analytical review of the functionality of the item has been completed. The device demonstrates a shallow sub-threshold swing of 8mV/decade and an off-state leakage current of 29nA/µm.