Materials Today Communications · 2022 · 10 citations · 23 references
Natural SciencesMaterials EngineeringMaterials ScienceInorganic ChemistryMaterials ChemistryThin FilmsAtomic Layer DepositionThin Film Electrical PropertiesThin Film OxidationThin Film Thermal PropertiesThin-film DepositionThin-film MaterialsAtomic Layer Deposition PrecursorsPrecursor ChemistryPrecursor DesignThermal StabilityThin Oxide FilmsThin-film Growth MechanismsVapor PressureZirconia Materials
In this study, the thermal stability of cyclopentadienyl tris(dimethylamino)zirconium (CpZr(NMe2)3), a representative precursor for the deposition of ZrO2 films, was evaluated after exposure to thermal stress. As a result, we predicted that dimethylamine, and trimethylamine may be generated when CpZr(NMe2)3 was heated. These impurities affect the growth of film and the properties of the film. In particular, by changing the vapor pressure of CpZr(NMe2)3, thin films with different characteristics are formed under the same process conditions, and consequently, the reliability of the device was also reduced. Therefore, this study demonstrates that the decomposition of precursors must be studied to develop new precursors and highly reliable thin films and devices.
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