Effective integration of a MOSFET phototransistor to a GaN LED for UVsensing

Abstract

In this Letter, we report an effective monolithic integration of a metal oxide semiconductor field effect (MOSFET) phototransistor (PT) and a light-emitting diode (LED) on a GaN-on-Si LED epitaxial (epi) wafer. Avoiding additional growth or Si diffusion, the PT was directly fabricated on the LED epi layer, providing a cost-effective and facile method. As a driver, the PT could modulate both peak value of the light intensity and output current of the integrated LED. As an ultraviolet (UV) detector, our PT showed sufficient responsivity. It was found that the gate-voltage-dependent photocurrent-response of the device had a shorter response time, and a higher responsivity was obtained at a higher gate-voltage bias. The device demonstrated a switching effect that the photoinduced current from the PT drove the LED when the UV lamp was turned on, whereas the photoinduced current stopped driving upon powering off the UV lamp. The experiment proved that the integrated device working as a UV detector exhibited a fast response time and a longstanding stability. We anticipate that such an approach could have potential applications for UV light detection and visible light communication (VLC).