Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

First-principles calculations for defects and impurities: Applications to III-nitrides

Chris G. Van de Walle, Jörg Neugebauer · Journal of Applied Physics · 2004 · 3.2K citations

Natural Sciences, Materials Science, Physics +17

AlGaN/GaN HEMTs-an overview of device operation and applications

Umesh K. Mishra, P. Parikh, Yifeng Wu · Proceedings of the IEEE · 2002 · 2.2K citations

Engineering, Electrical Engineering, Materials Science +17

First-principles study of native point defects in ZnO

A. F. Kohan, Gerbrand Ceder, Dane Morgan et al. · Physical review. B, Condensed matter · 2000 · 1.7K citations

Natural Sciences, Materials Science, Physics +17

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao, Srabanti Chowdhury, M.A. Hollis et al. · Advanced Electronic Materials · 2017 · 1.5K citations · Full text

Engineering, Materials Science, Physics +17

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Michael Kneissl, Tae‐Yeon Seong, Jung Han et al. · Nature Photonics · 2019 · 1.3K citations

Engineering, Electrical Engineering, Materials Science +12