Concepedia

Gate-bias instability of few-layer WSe<sub>2</sub> field effect transistors

Shaofeng Wen, Changyong Lan, Chun Li, Sihan Zhou, Tianying He, Rui Zhang, Ruisen Zou, Hao Hu, Yi Yin, Yong Liu

RSC Advances · 2021 · 18 citations · 39 references

DOIFull text

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Concepts

Abstract

The performance of the few-layer p-type WSe<sub>2</sub>-based field effect transistor is sensitive to the environment and gate bias stress.

References

39

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