Low Temperature Cu/SiO2 Hybrid Bonding with Metal Passivation

Abstract

Cu/SiO2 hybrid bonding process with short duration (1 minute) has been successfully performed at low temperature (120 °C) under the atmosphere with metal passivation material. Electrical performance (over 15K daisy chain and 10−8 Ω-cm2 specific contact resistance), mechanical strength (>15kgf), and reliability have been conducted to verify its excellent bonding quality. This method of hybrid bonding therefore provides a wide range of applications and a new solution for 3D integration.