Low Temperature Cu/SiO2 Hybrid Bonding with Metal Passivation

Demin Liu, Po-Chi Chen, Chien-Kang Hsiung, Shin‐Yi Huang, Yan-Pin Huang, Steven Verhaverbeke, Glen Mori, Kuan‐Neng Chen

2020 · 15 citations · 1 references

Concepts

Abstract

Cu/SiO2 hybrid bonding process with short duration (1 minute) has been successfully performed at low temperature (120 °C) under the atmosphere with metal passivation material. Electrical performance (over 15K daisy chain and 10−8 Ω-cm2 specific contact resistance), mechanical strength (>15kgf), and reliability have been conducted to verify its excellent bonding quality. This method of hybrid bonding therefore provides a wide range of applications and a new solution for 3D integration.

References

1