Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals

Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC

S. A. Sakwe, Ralf Müller, Peter J. Wellmann · Journal of Crystal Growth · 2006 · 81 citations

Natural Sciences, Materials Engineering, Materials Science +14

Bulk Growth of Large Area SiC Crystals

Adrian R. Powell, Joseph J. Sumakeris, Yuri I. Khlebnikov et al. · Materials science forum · 2016 · 73 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method

Y. Yamamoto, Shunta Harada, Kazuaki Seki et al. · Applied Physics Express · 2014 · 63 citations

Natural Sciences, Materials Engineering, Materials Science +17

Evolution of threading screw dislocation conversion during solution growth of 4H-SiC

Shunta Harada, Y. Yamamoto, Katsutoshi Seki et al. · APL Materials · 2013 · 60 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +15

Growth of SiC bulk crystals for application in power electronic devices – process design, 2D and 3D X‐ray in situ visualization and advanced doping

Peter J. Wellmann, Georg Neubauer, Lars Fahlbusch et al. · Crystal Research and Technology · 2014 · 42 citations

Engineering, Materials Engineering, Materials Science +17