Semiconductor Science and Technology · 2019 · 30 citations · 35 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsTunnelingCutoff FrequencyField-effect Transistor SimulationField-effect Transistor Transfer CharacteristicsMetal-oxide-semiconductor Field-effect Transistor ModelingTunnel Junction DesignTunnel JunctionsTunneling CurrentTunneling Field-effect Transistors
Abstract In this paper, a new source-all-around tunnel field-effect transistor (SAA-TFET) is proposed and investigated by using TCAD simulation. The tunneling junction in the SAA-TFET is divided laterally and vertically with respect to the channel direction which provides a relatively large tunneling junction area. An n+ pocket design is also introduced around the source to enhance tunneling rates and improve the device characteristics. In addition, the gate and n+ pocket region also overlap in the vertical and the lateral directions resulting in an enhanced electric field and, in turn, the ON-state current of the SAA-TFET is highly increased compared with the conventional TFET. Promising results in terms of DC ( I ON , I OFF , ON/OFF current ratio and SS ) and analog (cutoff frequency) performance are obtained for low ( V DD = 0.5 V) and high ( V DD = 1 V) supply voltages.
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One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
Yan Xia, Pengfei Yang, Yugang Sun et al. · Advanced Materials · 2003 · 8.5K citations