Self-Heating Characterization of $\beta$ -Ga₂O₃ Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography

Abstract

β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin-channel MOSFETs were evaluated using both dc and pulsed I-V measurements. The reported pulsed I-V technique was used to study selfheating effects in the MOSFET channel. The device was analyzed over a large temperature range of 23 °C-200 °C. A relationship between dissipated power and channel temperature was established, and it was found that the MOSFET channel was heating up to 208 °C when dissipating 2.5 W/mm of power. The thermal resistance of the channel was found to be 73 °C-mm/W. The results are supported with the experimental Raman nanothermography and thermal simulations and are in reasonable agreement with pulsed I-V findings. The high thermal resistance underpins the importance of optimizing thermal management in future Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> devices.