Science Advances · 2019 · 94 citations · 33 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyOxide SemiconductorsSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsHigh-temperature Device OperationHigh-temperature ElectronicsSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky Barrier DiodesSchottky Barriers
All-oxide Schottky diode PdCoO 2 /β-Ga 2 O 3 demonstrates high-temperature operation over 300°C with a large barrier height of 1.8 eV.
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Barrier inhomogeneities at Schottky contacts
J.H. Werner, H. Güttler · Journal of Applied Physics · 1991 · 1.6K citations
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
J. Y. Tsao, Srabanti Chowdhury, M.A. Hollis et al. · Advanced Electronic Materials · 2017 · 1.5K citations · Full text
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
S. J. Pearton, F. Ren, Marko J. Tadjer et al. · Journal of Applied Physics · 2018 · 634 citations