Applied Physics Letters · 2019 · 42 citations · 41 references
EngineeringMaterials EngineeringMaterials SciencePower ElectronicsSemiconductor DevicesThermal AnalysisHeat ConductionHeat Transfer ModelingThermal ManagementThermal Properties Of MaterialsWide Band Gap SemiconductorsWide-bandgap SemiconductorsAluminum Gallium NitrideAluminum NitrideGallium NitrideSelf-heating EffectsTemperature ProfilesThermal CharacterizationThermal ConductivityThermal Management Of Semiconductor Devices
Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1−xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1−xN may open the door for extreme temperature applications.
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