Lateral source field-plated <i>β</i> -Ga ₂ O ₃ MOSFET with recorded breakdown voltage of 2360 V and low specific on-resistance of 560 mΩ cm ²

Abstract

Abstract In this letter, lateral β -Ga 2 O 3 MOSFETs with source field plate are fabricated on Si-doped homoepitaxial film on (010) Fe-doped semi-insulating β -Ga 2 O 3 substrate. The drain extension in the source field plate effectively suppresses the peak electric field in the Ga 2 O 3 channel, and improves the breakdown voltage greatly. Moreover, fluorinert FC-770 is used to reduce air breakdown potential during the breakdown testing. The breakdown voltage of the device with L sd of 28 μ m is measured as high as 2360 V, which is the highest value in reported lateral Ga 2 O 3 MOSFET. Besides, Si-ion implantation is adopted to reduce the ohmic contact resistance ( R c ). The value of specific on-resistance ( R on,sp ) is calculated to be 560 mΩ cm 2 , which is a recorded value under such high breakdown voltage, and also lower than the theoretical limit of Si-based power devices under the same breakdown voltage.