Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template

Hongjian Li, Matthew S. Wong, Michel Khoury, Bastien Bonef, Haojun Zhang, YiChao Chow, Panpan Li, Jared A. Kearns, Aidan A. Taylor, P. de Mierry,

Optics Express · 2019 · 52 citations · 30 references

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Abstract

and exhibited a size-independent EQE of 2% by sidewall passivation using atomic-layer deposition, followed by an extremely low leakage current of ~0.1 nA at -5 V. Moreover, optical polarization behavior with a polarization ratio of 40% was observed. This work demonstrated long-wavelength µLEDs fabricated on semipolar GaN grown on foreign substrate, which are applicable for a variety of display applications at a low cost.

References

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