2019 · 12 citations · 3 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationIii-v SemiconductorsSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsChannel Doping EffectsChannel EngineeringChannel Profile GeometryField Channel DesignPower MosfetsSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide Power Devices
The static and dynamic performance of Silicon Carbide (SiC) MOSFET rated for 1200V applications has been investigated. MOSFETs with a planar design and several different cell pitches have been fabricated. Special attention has been dedicated to the channel design, where a novel retrograde doping profile has been employed. For reference, a more common box profile channel has also been used. Turn-off measurements under high current and over voltage conditions reveal that the MOSFET body diode offers wide safe operating area capability. The MOSFETs feature exceptional ruggedness against long short circuit events, with the retrograde channel designs able to withstand the 10μ s industry standard specification.
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Performance and ruggedness of 1200V SiC — Trench — MOSFET
Dethard Peters, Ralf Siemieniec, Thomas Aichinger et al. · 2017 · 149 citations
Engineering, Electrical Engineering, Materials Engineering +17