Switching Speed Analysis and Controlled Oscillatory Behavior of a Cr-Doped V₂O₃ Threshold Switching Device for Memory Selector and Neuromorphic Computing Application

Abstract

The switching speed of a threshold switching Cr-doped V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> device as function of voltage and resistive load is understood by means of a thermal device model. It is found that conditions that result in switching trajectories traveling further from equilibrium result in reduced switching time and energy, providing interesting guidelines for the optimization of the 1S1R memory cell. Secondly, the addition of capacitive loads is investigated. Voltage-controlled oscillatory behavior in the frequency range of 10-30 MHz has been obtained and also properly simulated by our device model. Such nanodevice oscillators are of high interest for new neuromorphic computing paradigms.