Concepedia

Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors

Masafumi Hirose, Toshihide Nabatame, Kazuya Yuge, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Yoshihiro Irokawa, Hideo Iwaï, Hideyuki Yasufuku, Satoshi Kawada,

Microelectronic Engineering · 2019 · 34 citations · 34 references

DOI

Concepts

References

34

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata et al. · Applied Physics Letters · 2012 · 1.8K citations

, , +17

High dielectric constant oxides

John Robertson · The European Physical Journal Applied Physics · 2004 · 1.8K citations · Full text

, , +17

High-quality β-Ga<sub>2</sub>O<sub>3</sub> single crystals grown by edge-defined film-fed growth

Akito Kuramata, Kimiyoshi Koshi, Shinya Watanabe et al. · Japanese Journal of Applied Physics · 2016 · 1K citations

, , +17

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

Masataka Higashiwaki, Kohei Sasaki, Takafumi Kamimura et al. · Applied Physics Letters · 2013 · 719 citations

, , +17

Growth of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals by the Edge-Defined, Film Fed Growth Method

Hideo Aida, Nishiguchi Kengo, Hidetoshi Takeda et al. · Japanese Journal of Applied Physics · 2008 · 684 citations

, , +15