Concepedia

Author

Masafumi Hirose

National Institute for Materials Science

Also Known As

Masafumi Hirose

23

Publications

201

Citations

9

H-Index

20

Concepts

All Affiliations

National Institute for Materials ScienceShibaura Institute of TechnologyNagoya University
MH

About

Masafumi Hirose is an author at National Institute for Materials Science specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

5

5

116

2

Applied Physics

4

4

92

3

Natural Sciences

1

1

22

4

Chemical Engineering

1

1

24

5

Chemistry

1

1

24

Masafumi Hirose

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8

Publications

166

Citations

8

H-Index

YearCitations

Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors

Toshihide Nabatame, Erika Maeda, Mari Inoue,

Applied Physics Express

2019

37

Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors

Masafumi Hirose, Toshihide Nabatame, Kazuya Yuge,

Microelectronic Engineering

2019

29

A new chemical analysis system using a photocathode RF gun

Yasushi Aoki, Jinfeng Yang, Masafumi Hirose,

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment

2000

24

Production of an intense slow positron beam using a compact cyclotron

Masafumi Hirose, Masakazu Washio, Kazuyoshi Takahashi

Applied Surface Science

1995

22

Brightness enhanced intense slow positron beam produced using an electron linac

Yasuo Ito, Masafumi Hirose, S. Takamura,

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment

1991

18

Interface characteristics of β-Ga2O3/Al2O3/Pt capacitors after postmetallization annealing

Masafumi Hirose, Toshihide Nabatame, Yoshihiro Irokawa,

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

2020

16

Change of characteristics of n-GaN MOS capacitors with Hf-rich HfSiOx gate dielectrics by post-deposition annealing

Erika Maeda, Toshihide Nabatame, Kazuya Yuge,

Microelectronic Engineering

2019

10

Correlation between SiO2 growth rate and difference in electronegativity of metal–oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor

Erika Maeda, Toshihide Nabatame, Masafumi Hirose,

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

2020

10

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