Substitutional and interstitial impurity p-type doping of thermoelectric Mg<sub>2</sub>Si: a theoretical study

Naomi Hirayama, Tsutomu Iida, Mariko Sakamoto, Keishi Nishio, Noriaki Hamada

Science and Technology of Advanced Materials · 2019 · 33 citations · 26 references

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Concepts

Abstract

values for Si (p-type) sites. Furthermore, the interstitial insertion of Cl and F atoms into the crystal lattice leads to hole doping because of their high electronegativity.

References

26