Formation of Ohmic contacts on laser irradiated n-type 6H-SiC without thermal annealing

Interpretation of Raman spectra of disordered and amorphous carbon

Andrea C. Ferrari, John Robertson · Physical review. B, Condensed matter · 2000 · 15.2K citations

Natural Sciences, Materials Science, Physics +16

Material science and device physics in SiC technology for high-voltage power devices

Tsunenobu Kimoto · Japanese Journal of Applied Physics · 2015 · 1.1K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Electronic Structure of Epitaxial Graphene Layers on SiC: Effect of the Substrate

F. Varchon, Rui Feng, Joanna Hass et al. · Physical Review Letters · 2007 · 751 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

The Physics of Ohmic Contacts to SiC

J. Crofton, Lisa M. Porter, John R. Williams · physica status solidi (b) · 1997 · 195 citations

Engineering, Materials Engineering, Materials Science +15

Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide

Konstantin Vassilevski, Nicolas G. Wright, Alton B. Horsfall et al. · Journal of Applied Physics · 2005 · 145 citations

Engineering, Materials Engineering, Materials Science +17