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Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 h
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Citations
19
References
2019
Year
Wide-bandgap SemiconductorPhotonicsElectrical EngineeringOptical MaterialsEngineeringSolid-state LightingRoom-temperature Continuous-wave OperationApplied PhysicsBlue-violet LdGan Power DeviceBlue-violet Laser DiodesCategoryiii-v SemiconductorOptoelectronicsCompound SemiconductorLong Lifetime
GaN-based continuous-wave operated blue-violet laser diodes (LDs) with long lifetime are demonstrated, which are grown on a c-plane GaN substrate by metal organic chemical vapor deposition with a 10 × 600 μm2 ridge waveguide structure. The electrical and optical characteristics of a blue-violet LD are investigated under direct-current injection at room temperature (25 °C). The stimulated emission wavelength and peak optical power of the LD are around 413 nm and over 600 mW, respectively. In addition, the threshold current density and voltage are as small as 1.46 kA/cm2 and 4.1 V, respectively. Moreover, the lifetime is longer than 1000 hours under room-temperature continuous-wave operation.
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