Journal of Semiconductors · 2019 · 39 citations · 19 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesOptical SourcesOptoelectronic DevicesSemiconductor Device MaterialsSemiconductor LasersSemiconductor PhysicsBlue Laser DiodesCurrent DensityCurrent InjectionDirect InjectionMetal-organic Chemical Vapor DepositionMetalorganic Chemical Vapor DepositionSemiconductor Laser DiodesStimulated Emission
GaN-based continuous-wave operated blue-violet laser diodes (LDs) with long lifetime are demonstrated, which are grown on a c-plane GaN substrate by metal organic chemical vapor deposition with a 10 × 600 μm2 ridge waveguide structure. The electrical and optical characteristics of a blue-violet LD are investigated under direct-current injection at room temperature (25 °C). The stimulated emission wavelength and peak optical power of the LD are around 413 nm and over 600 mW, respectively. In addition, the threshold current density and voltage are as small as 1.46 kA/cm2 and 4.1 V, respectively. Moreover, the lifetime is longer than 1000 hours under room-temperature continuous-wave operation.
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InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations
Group III-nitride lasers: a materials perspective
Matthew T. Hardy, Daniel Feezell, Steven P. DenBaars et al. · Materials Today · 2011 · 157 citations · Full text