RSC Advances · 2018 · 20 citations · 22 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThin FilmsAmorphous MaterialsDielectric MaterialsDielectricsSemiconductor Device MaterialsThin-film MaterialsThin-film TransistorsDielectric ConstantFlexible Thin-film TransistorsLeakage CurrentOxide DielectricsPrecursor ChemistryPrecursor MaterialsSubthreshold SwingThreshold Voltage
Solution-processed amorphous zirconium oxide (ZrO <sub>2</sub> ) dielectrics were formed <italic>via</italic> a non-hydrolytic sol–gel route at low-temperature. The ZrO <sub>2</sub> films exhibited a high dielectric constant and high mobility p-type pentacene TFTs were fabricated using them.
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Electronic Transport in Amorphous Silicon Films
P. G. Le Comber, W. E. Spear · Physical Review Letters · 1970 · 453 citations