Japanese Journal of Applied Physics · 2018 · 17 citations · 26 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThin FilmsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor ReliabilitySemiconductor Thin FilmsThin Film Electrical PropertiesThin-film TransistorsAnnealing EffectsAnnealing Temperature EffectsAnnealing Time EffectsElectrical PropertiesHysteresisOxide Thin-film TransistorsPassivation LayersTransfer Characteristics
Abstract The influence of a SiO 2 passivation layer on the electrical properties and reliability of an In–W–Zn–O thin-film transistor (IWZO TFT) was investigated under various post-annealing temperatures ( T a ). Although the TFT without passivation showed good transfer characteristics when the T a is 150 °C, it has huge hysteresis and poor reliability. Furthermore, the TFTs without passivation changed from transistor to conductor when the T a is 200 °C or higher. In contrast, the TFTs with passivation exhibited switching property even at T a of 350 °C. Positive bias temperature stress reliability of the TFTs significantly improved by applying the T a with passivation. Thus, a passivation layer is essential to increase the T a , resulting in the improvement of electrical properties and reliability of the IWZO TFTs.
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Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors
Hyeon-Kyun Noh, K. J. Chang, Byungki Ryu et al. · Physical Review B · 2011 · 329 citations