Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry - Concepedia

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Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry

DOI Full Paper Access

18

Citations

49

References

2018

Year

Dennis H. van Dorp, Sophia Arnauts, Mikko Laitinen, Timo Sajavaara, Johan Meersschaut, Thierry Conard, J. J. Kelly

Applied Surface Science

Materials ScienceSemiconductorsEngineeringSurface ScienceApplied PhysicsNanoscale EtchingStriking ContrastSemiconductor Device FabricationPlasma EtchingCompound SemiconductorIii-v SemiconductorsSemiconductor Nanostructures

References

	Year	Citations

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