IEEE Journal of Solid-State Circuits · 2018 · 45 citations · 20 references
EngineeringComputer EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsSensorsAnalog Integrated CircuitsCmos Circuit DesignDigital Image ProcessingDigital Integrated CircuitsLow-power Digital Circuit DesignSubthreshold Circuit DesignAnalog-to-digital ConvertersCmos Analog Circuit DesignCmos Analog Integrated CircuitsCmos Image SensorsCmos Logic CircuitsComparator DesignGlobal ShutterSubthreshold Operation
In this paper, we report on a back-illuminated, global shutter, CMOS image sensor (CIS) with a pixel-parallel, single-slope analog-to-digital converter (ADC). We adopted a digital bucket relay transfer with multistage flip-flop connection, a pixel unit Cu-Cu connection, and positive-feedback circuitry, to realize a 6.9-μm pixel-pitch, 1.46-Mpixel pixel-parallel ADC. By operating the comparator with a bias current in the subthreshold region of 7.74-111 nA, we succeeded in reducing the peak current during simultaneous ADC. In combination with an ADC standby operation, we succeeded in further reducing the pixel-parallel ADC power consumption. With these techniques, we realized a normalized figure of merit of 0.24 nJ·e-rms/step calculated by dividing the entire sensor power by the effective ADC resolution at a subthreshold current of 111 nA during 660 frames/s operation.
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