β-Ga ₂ O ₃ defect study by steady-state capacitance spectroscopy

Abstract

Abstract We use steady-state capacitance measurement originally intended for capacitance–voltage experiment to observe and characterize the electrical properties of deep defects in β-Ga 2 O 3 semiconductors. We detect a deep level located 0.81 eV below the conduction band edge with a concentration of 1.2 × 10 16 cm −3 and a capture cross-section of 1.1 × 10 −14 cm 2 , making it potentially influential in determining the performance of β-Ga 2 O 3 based power electronic and optoelectronic devices. This deep level may dominate the thermal activation of off-state drain current in β-Ga 2 O 3 transistors at high temperatures and, together with another shallower level at 0.13 eV, may substantially lower the breakdown voltage in Schottky diodes.