Nitrogen-Doped ZnO Film Fabricated Via Rapid Low-Temperature Atomic Layer Deposition for High-Performance ZnON Transistors

Abstract

High-performance nitrogen-doped ZnO (ZnON)-based thin-film transistors (TFTs) were fabricated by atomic layer deposition (ALD) with a rapid purging time of only 5 s at a temperature as low as 150 °C. It is the first time to report ALD ZnON TFT using NH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> as N source. It is found that ZnON TFT with a N: Zn atomic ratio of 1:19 (ZnON 1:19) exhibited excellent properties, such as lower subthreshold swing of 0.47 V/decade and smaller ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> of 0.71 V under the temperature stress from 25 to 105 °C. The I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> and I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> decreased as N-doping concentration increased, and ZnON 1:19 TFT presented a high I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> /I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> ratio of 1.75 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> . The density of state was calculated by temperature stress. Combining with the X-ray photoelectron spectroscopy analysis, we built a model to explain the reaction mechanism that the moderate amount of N doping could significantly suppress the creation of oxygen defects.