Temperature dependent transport characterization of iron on n-type (111) Si0.65Ge0.35 Schottky diodes

Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

H.C. Card, E. H. Rhoderick · Journal of Physics D Applied Physics · 1971 · 1.8K citations

Engineering, Electrical Engineering, Materials Science +17

Barrier inhomogeneities at Schottky contacts

J.H. Werner, H. Güttler · Journal of Applied Physics · 1991 · 1.6K citations

Engineering, Electrical Engineering, Materials Science +17

Metal-semiconductor contacts

M. Pepper · Physics in Technology · 1974 · 1.1K citations

On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers

Y.P. Song, R.L. Van Meirhaeghe, W.H. Laflère et al. · Solid-State Electronics · 1986 · 560 citations

Engineering, Materials Engineering, Materials Science +14

Current-voltage characteristics and barrier parameters of Pd₂Si/p-Si(111) Schottky diodes in a wide temperature range

Subhash Chand, Jitendra Kumar · Semiconductor Science and Technology · 1995 · 208 citations

Engineering, Electrical Engineering, Materials Science +17