Concepedia

67‐2: Requirement of a Polyimide Substrate to Achieve High Thin‐film‐transistor Reliability

Tomoatsu Kinoshita, Yuichiro Ishiyama, Takashige Fujimori, Kenta Masuda, Kenichi Takahashi, Masanobu Tanaka, Toshiaki Arai

SID Symposium Digest of Technical Papers · 2018 · 15 citations · 10 references

DOI

Concepts

Abstract

The reliability of top‐gate oxide thin‐film‐transistors on a polyimide substrate correlates with the volume resistivity of the polyimide substrate. Hence, the polyimide used as a TFT substrate should have a high resistivity of 3×10 17 ohm‐cm or more to ensure high TFT reliability equal to the TFT on a glass substrate.

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