I-V model of nano nMOSFETs incorporating drift and diffusion current

Moore's law: past, present and future

Ross Schaller · IEEE Spectrum · 1997 · 1.9K citations

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FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

Chenming Hu, Jeffrey Bokor, Tsu‐Jae King et al. · IEEE Transactions on Electron Devices · 2000 · 1.6K citations

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Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature

C. Canali, G. Majni, R. Minder et al. · IEEE Transactions on Electron Devices · 1975 · 645 citations

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Chris A. Mack · IEEE Transactions on Semiconductor Manufacturing · 2011 · 634 citations

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FinFET scaling to 10 nm gate length

Bin Yu, Leland Chang, Safayet Ahmed et al. · 2003 · 595 citations

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