ACS Applied Materials & Interfaces · 2017 · 47 citations · 44 references
EngineeringMaterials SciencePhysicsNanomaterialsNanotechnologySemiconductor MaterialsNanomechanicsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor NanomaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesAnnealingBand GapMultimode ResonatorsNanomechanical ResonatorsNanoresonatorsPower Electronics DevicesThermal AnnealingThermal Annealing Effects
Beta gallium oxide (β-Ga 2 O 3 ) is an emerging ultrawide band gap (4.5 eV–4.9 eV) semiconductor with attractive properties for future power electronics, optoelectronics, and sensors for detecting gases and ultraviolet radiation. β-Ga 2 O 3 thin films made by various methods are being actively studied toward such devices. Here, we report on the experimental demonstration of single-crystal β-Ga 2 O 3 nanomechanical resonators using β-Ga 2 O 3 nanoflakes grown via low-pressure chemical vapor deposition (LPCVD). By investigating β-Ga 2 O 3 circular drumhead structures, we demonstrate multimode nanoresonators up to the sixth mode in high and very high frequency (HF/VHF) bands, and also realize spatial mapping and visualization of the multimode motion. These measurements reveal a Young’s modulus of E Y = 261 GPa and anisotropic biaxial built-in tension of 37.5 MPa and 107.5 MPa. We find that thermal annealing can considerably improve the resonance characteristics, including ∼40% upshift in frequency and ∼90% enhancement in quality ( Q ) factor. This study lays a foundation for future exploration and development of mechanically coupled and tunable β-Ga 2 O 3 electronic, optoelectronic, and physical sensing devices.
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Large-size β-Ga2O3 single crystals and wafers
Encarnación G. Vı́llora, Kiyoshi Shimamura, Yukio Yoshikawa et al. · Journal of Crystal Growth · 2004 · 633 citations
Natural Sciences, Materials Engineering, Materials Science +12