Graphene‐<i>β</i>‐Ga₂O₃ Heterojunction for Highly Sensitive Deep UV Photodetector Application

Abstract

A deep UV light photodetector is assembled by coating multilayer graphene on beta-gallium oxide (β-Ga₂ O₃ ) wafer. Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility.