Concepedia

Gallium nitride grown by molecular beam epitaxy at low temperatures

April M. Jeffries, Laura Ding, J. J. Williams, Todd L. Williamson, Mark A. Hoffbauer, Christiana B. Honsberg, Mariana I. Bertoni

Thin Solid Films · 2017 · 20 citations · 33 references

DOIFull text

Open access

Concepts

References

33

Luminescence properties of defects in GaN

M. A. Reshchikov, H. Morkoç̌ · Journal of Applied Physics · 2005 · 1.9K citations

, , +17

III–nitrides: Growth, characterization, and properties

S.C. Jain, M. Willander, J. Narayan et al. · Journal of Applied Physics · 2000 · 1.3K citations

, , +17

Properties of GaN and related compounds studied by means of Raman scattering

Hiroshi Harima · Journal of Physics Condensed Matter · 2002 · 683 citations

, , +17

Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

B. Heying, R. Averbeck, L. F. Chen et al. · Journal of Applied Physics · 2000 · 485 citations

, , +17

Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

E. J. Tarsa, B. Heying, Xuemei Wu et al. · Journal of Applied Physics · 1997 · 404 citations

, , +17