Fabrication of AlGaN nanorods with different Al compositions for emission enhancement in UV range

Abstract

h modes and near band edge emission (NBE) peaks of AlGaN nanorods compared to the planar ones, indicating the residual strain releasing after nano-fabrication. The integrated intensities of NBE peaks of AlGaN nanorods manifest light emission enhancement up to 2.7 at deep-UV range. Finite-difference time-domain (FDTD) simulations have been adopted to investigate the light extraction and far-field distribution of such structures, it turned out that ordered nanorod array can enhance the TM polarized emission extraction 2-7 folds compared to the planar structure. The optical regulation in nanorod arrays should take the responsibility for the observed optical enhancements, which is proved by the far-field distribution of light, thus it can improve the performance of ultraviolet LEDs.