Thermodynamic analysis of (0001) and $(000\bar{1})$ GaN metalorganic vapor phase epitaxy

Abstract

We performed a thermodynamic analysis of GaN metalorganic vapor phase epitaxy considering the (0001) and surface states. Surface reconstruction, which depends on growth conditions such as temperature and partial pressure, affects growth processes. To discuss the effects of surface states on growth processes, we investigated the driving force of precursor deposition to form the surface phase defined stoichiometrically. In both N2 and H2 carrier gas cases, we showed surface phase diagrams, calculated driving forces, and discussed the difference in growth orientation.