Resistive Random Access Memory for Future Information Processing System

Abstract

Resistive random access memory (RRAM) is regarded as one of the most promising emerging memory technologies for next-generation embedded, standalone nonvolatile memory (NVM), and storage class memory (SCM) due to its speed, density, cost, and scalability. Considerable progress has been made in recent years on the manufacturability of RRAM, with low-density RRAM products now in production and the path to higher density parts becoming clearer. This review updates the learning on the fundamental materials and process integration needed for high-volume manufacturing and summarizes very recent progress on array level performance improvement methodology using novel techniques, and circuit level contributions for different applications. The device performance, array integration, and device/circuit codesign for memory systems are discussed. Novel applications besides embedded memory and standalone memory are addressed, including hardware security, neuromorphic computing, and nonvolatile logic systems.