High-Power Eu-Doped GaN Red LED Based on a Multilayer Structure Grown at Lower Temperatures by Organometallic Vapor Phase Epitaxy

Development of InGaN-based red LED grown on (0001) polar surface

Rei Hashimoto, S. Saito, Shinya Nunoue · Applied Physics Express · 2014 · 266 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates

Troy J. Baker, B. A. Haskell, Feng Wu et al. · Japanese Journal of Applied Physics · 2006 · 198 citations

Engineering, Materials Engineering, Materials Science +16

Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection

Atsushi Nishikawa, Takashi Kawasaki, N. Furukawa et al. · Applied Physics Express · 2009 · 197 citations

Engineering, Electrical Engineering, Materials Science +17

Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors

Katsumi Kishino, Kazuya Nagashima, K. Yamano · Applied Physics Express · 2013 · 135 citations

Engineering, Electrical Engineering, Materials Science +14

Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy

Atsushi Nishikawa, N. Furukawa, Takashi Kawasaki et al. · Applied Physics Letters · 2010 · 83 citations

Engineering, Materials Engineering, Materials Science +17