Threading dislocation free GaSb nanotemplates grown by selective molecular beam epitaxy on GaAs (001) for in-plane InAs nanowire integration

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

Hyunhyub Ko, Kuniharu Takei, Rehan Kapadia et al. · Nature · 2010 · 412 citations · Full text

Engineering, Materials Engineering, Materials Science +16

X-ray diffraction peaks due to misfit dislocations in heteroepitaxial structures

Vladimir M. Kaganer, R. Köhler, M. Schmidbauer et al. · Physical review. B, Condensed matter · 1997 · 346 citations

Natural Sciences, Materials Engineering, Materials Science +15

Strain relief by periodic misfit arrays for low defect density GaSb on GaAs

S. H. Huang, Ganesh Balakrishnan, Arezou Khoshakhlagh et al. · Applied Physics Letters · 2006 · 259 citations

Engineering, Materials Science, Physics +17

Tunnel field-effect transistor using InAs nanowire/Si heterojunction

Katsuhiro Tomioka, Takashi Fukui · Applied Physics Letters · 2011 · 120 citations

Engineering, Electrical Engineering, Materials Science +17

GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 $\mu$m at Room Temperature

L. Cerutti, Jean‐Baptiste Rodriguez, E. Tournié · IEEE Photonics Technology Letters · 2010 · 73 citations

Engineering, Materials Engineering, Materials Science +17