GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 $\mu$m at Room Temperature

Abstract

We have investigated the potential of GaSb-based lasers for emission at 1.55 μm and monolithic integration on silicon. We designed an active region based on strained Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.8</sub> In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.2</sub> Sb quantum-wells aiming a good carrier confinement. To validate this design, the active region was first used in edge-emitting lasers grown on GaSb substrates. Continuous-wave operation at 1.56 μm has been achieved up to 45°C. The same laser structure grown on Si substrate showed room-temperature operation in pulsed regime at 1.55 μm with a threshold current density of 5 kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .