T. E. Crumbaker

Growth of InP on Si substrates by molecular beam epitaxy

T. E. Crumbaker, H. Y. Lee, M. J. Hafich et al. · Applied Physics Letters · 1989 · 46 citations

Materials Science, Semiconductors, Inp Films +14

Silicide epilayers: recent developments and prospects for a Si-compatible technology

J. Derrien, Joël Chevrier, V. Le Thanh et al. · Applied Surface Science · 1993 · 44 citations

Engineering, Microfabrication, Silicide Epilayers +7

Hall effect measurement in the diamond anvil high-pressure cell

Dinesh Patel, T. E. Crumbaker, James R. Sites et al. · Review of Scientific Instruments · 1986 · 30 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +13

Growth of β-FeSi2 on silicon substrates by chemical beam epitaxy

T. E. Crumbaker, James Natoli, Isabelle Berbézier et al. · Journal of Crystal Growth · 1993 · 13 citations

Materials Engineering, Materials Science, Semiconductor Technology +6

Gas-source molecular-beam epitaxy growth of In<i>x</i>Ga1−<i>x</i>−<i>y</i>Al<i>y</i>P

M. J. Hafich, H. Y. Lee, T. E. Crumbaker et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 10 citations

Semiconductors, Room Temperature, Electrical Engineering +12