Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range

The physics of semiconductor devices

H. L. Grubin · IEEE Journal of Quantum Electronics · 1979 · 2.8K citations

Engineering, Materials Science, Physics +12

Transport properties of two finite armchair graphene nanoribbons

Luis Rosales, J. W. González · Nanoscale Research Letters · 2013 · 2K citations · Full text

Natural Sciences, Materials Science, Physics +17

Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

H.C. Card, E. H. Rhoderick · Journal of Physics D Applied Physics · 1971 · 1.8K citations

Engineering, Electrical Engineering, Materials Science +17

Metal-semiconductor contacts

E. H. Rhoderick · IEE Proceedings I Solid State and Electron Devices · 1982 · 1.7K citations

Engineering, Electrical Engineering, Materials Science +17

Barrier inhomogeneities at Schottky contacts

J.H. Werner, H. Güttler · Journal of Applied Physics · 1991 · 1.6K citations

Engineering, Electrical Engineering, Materials Science +17