S. Bengi

Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures

S. Bengi, M.M. Bülbül · Current Applied Physics · 2013 · 53 citations

Engineering, Materials Engineering, Materials Science +16

Frequency dependent dielectric properties and electrical conductivity of platinum silicide/Si contact structures with diffusion barrier

İ.M. Afandiyeva, M.M. Bülbül, Ş. Altındal et al. · Microelectronic Engineering · 2011 · 47 citations

Natural Sciences, Materials Engineering, Materials Science +17

Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes

M.M. Bülbül, S. Bengi, Ïlbilge Dökme et al. · Journal of Applied Physics · 2010 · 41 citations

Engineering, Electrical Engineering, Materials Science +17

Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range

K. Moraki, S. Bengi, S. Zeyrek et al. · Journal of Materials Science Materials in Electronics · 2016 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

Examination of Electrical and Dielectric Parameters of Au/n-Si Schottky Barrier Diodes (SBDs) with Organic Perylene Interlayer Using Impedance Measurements Under Various Illumination Intensities

S. Bengi, H. G. Çetinkaya, Ş. Altındal et al. · Journal of Electronic Materials · 2024 · 16 citations

Engineering, Materials Engineering, Materials Science +16