Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures

Extraction of Schottky diode parameters from forward current-voltage characteristics

S. K. Cheung, N.W. Cheung · Applied Physics Letters · 1986 · 2.7K citations

Engineering, Electrical Engineering, Materials Science +17

The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique

E. H. Nicollian, A. Goetzberger · Bell System Technical Journal · 1967 · 1.8K citations

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Arthur R. von Hippel, S. O. Morgan · Journal of The Electrochemical Society · 1955 · 1.5K citations

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A modified forward <i>I</i>-<i>V</i> plot for Schottky diodes with high series resistance

H. Norde · Journal of Applied Physics · 1979 · 1.5K citations

Engineering, Electrical Engineering, Materials Science +14

Metal-semiconductor contacts

M. Pepper · Physics in Technology · 1974 · 1.1K citations