H. G. Çetinkaya

Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures

S. Demirezen, H. G. Çetinkaya, Mehmet Kara et al. · Sensors and Actuators A Physical · 2020 · 88 citations

Materials Science, Engineering, Nanomaterials +6

Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures

H. G. Çetinkaya, H. Tecimer, Habibe Uslu et al. · Current Applied Physics · 2013 · 67 citations

Materials Science, Electrical Engineering, Various Temperatures +9

The fabrication of Al/p-Si (MS) type photodiode with (%2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics

H. G. Çetinkaya, Ömer Sevgi̇li̇, Ş. Altındal · Physica B Condensed Matter · 2019 · 46 citations

Materials Science, Photoelectric Sensor, Engineering +9

Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide Frequency Range

S. Demirezen, H. G. Çetinkaya, Ş. Altındal · Silicon · 2022 · 41 citations

Materials Science, Dielectric Properties, Electrical Engineering +8

Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (graphene + Ca1.9Pr0.1Co4Ox-doped poly(vinyl alcohol)) interfacial layer

H. G. Çetinkaya, Ş. Altındal, İkram Orak et al. · Journal of Materials Science Materials in Electronics · 2017 · 37 citations

Materials Science, Electrical Characteristics, Electrical Engineering +7