H. Tecimer

On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs)

H. Tecimer, Habibe Uslu, Z.A. Alahmed et al. · Composites Part B Engineering · 2013 · 92 citations

Electrical Engineering, Voltage Dependence, Engineering +8

Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions

Habibe Uslu, Serhat Orkun Tan, H. Tecimer et al. · Composites Part B Engineering · 2016 · 92 citations

Materials Science, Polyvinyl Alcohol, Electrical Engineering +12

Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n-GaAs Schottky barrier diodes (SBDs)

H. Tecimer, A. Türüt, Habibe Uslu et al. · Sensors and Actuators A Physical · 2013 · 84 citations

Electrical Engineering, Engineering, Applied Physics +5

Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures

Habibe Uslu, Serhat Orkun Tan, H. Tecimer et al. · Composites Part B Engineering · 2017 · 75 citations

Materials Science, Graphene Quantum Dot, Engineering +10

Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures

H. G. Çetinkaya, H. Tecimer, Habibe Uslu et al. · Current Applied Physics · 2013 · 67 citations

Materials Science, Electrical Engineering, Various Temperatures +9