Effect of growth temperature on InGaN/GaN heterostructures grown by MOCVD

Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy

D. Doppalapudi, Soumendra N. Basu, Karl Ludwig et al. · Journal of Applied Physics · 1998 · 228 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Compositional inhomogeneity and immiscibility of a GaInN ternary alloy

Akihiro Wakahara, Takashi Tokuda, Xiao-Zhong Dang et al. · Applied Physics Letters · 1997 · 106 citations

Natural Sciences, Materials Engineering, Materials Science +15

Fabry-Perot effects in InGaN∕GaN heterostructures on Si-substrate

Christoph Hums, Tilo Finger, Thomas Hempel et al. · Journal of Applied Physics · 2007 · 78 citations

Engineering, Materials Engineering, Materials Science +17

Engineering the magnetic properties of Ge1−xMnx nanowires

Olga Kazakova, Jaideep S. Kulkarni, Donna C. Arnold et al. · Journal of Applied Physics · 2007 · 69 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

A study of indium incorporation in In-rich InGaN grown by MOVPE

Yanyan Guo, X.L. Liu, Hanjie Song et al. · Applied Surface Science · 2009 · 56 citations

Engineering, Materials Engineering, Inorganic Chemistry +4