Publication | Closed Access
Effect of growth temperature on InGaN/GaN heterostructures grown by MOCVD
18
Citations
9
References
2016
Year
Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorGrowth TemperatureEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceOptoelectronicsCompound Semiconductor
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