2006 · 20 citations · 3 references
EngineeringComputer EngineeringElectrical EngineeringMemoryMicroelectronicsSemiconductor DevicesDevice ModelingMemory DevicesMemory ModelingMemory SystemsMemristive MaterialsSolid-state StorageMemory Device SimulationMemory MaterialsMemristive MemoryNon-volatile MemoryNon-volatile Memory DesignNonvolatile Memory MaterialsNonvolatile Memory ModelingPhase-change Memory
In this paper we present the first inherently single-piece model describing the phase change memories (PCM) electrical behavior. The model correctly reproduces for all bias and temperature conditions the behavior of both SET and RESET states, including the exponential pre-switching regime and the S-shaped negative differential resistance region. The model responds with resistance changes to different programming (SET or RESET) pulses, and retains the stored data. The proposed model provides a precious tool for the design of non-volatile memory products based on the new phase change memory concept
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Electronic Switching in Phase-Change Memories
A. Pirovano, Andrea L. Lacaita, A. Benvenuti et al. · IEEE Transactions on Electron Devices · 2004 · 612 citations
HSPICE macromodel of PCRAM for binary and multilevel storage
X.Q. Wei, Lijuan Shi, R. Walia et al. · IEEE Transactions on Electron Devices · 2005 · 52 citations