2003 · 13 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesBipolar Junction TransistorsChemical Vapor DepositionHigh-frequency Semiconductor DevicesMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor PhysicsCutoff FrequencyDevice OptimizationLogic Gate DelayMetal-oxide-semiconductor Field-effect Transistor ModelingPolysiliconSilicon Germanium Bipolar TransistorSpacer Design
A high-speed Si bipolar transistor with f/sub T/ (cutoff frequency) of 40 GHz using advanced BSA (BSG self-aligned) technology is described. The advanced BSA technology is characterized by graded profiled collector, buried emitter electrode structure, and 0.8- mu m design rule. The advanced BSA technology for further improving the f/sub T/ performance of the sub-100-nm-deep base transistor has been developed by adding these three technologies to the basic BSA technology, in which chemical vapor deposition (CVD)-BSG film is used as a diffusion source to form the intrinsic base and the p/sup +/-link region and as a sidewall spacer between emitter polysilicon and base polysilicon electrodes. The optimized transistor using the advanced BSA technology has exhibited a cutoff frequency of 38 GHz at V/sub CE/ of 1 V, and ECL (emitter coupled logic) gate delay time of 29 ps at I/sub CS/ of 0.3 mA.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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BSA Technology for sub-100nm deep base bipolar transistors
H. Takemura, S. Ohi, Masataka Sugiyama et al. · 1987 · 23 citations
A sub-30 psec Si bipolar LSI technology
T. Gomi, Hiroaki Miwa, H. Sasaki et al. · 2003 · 19 citations