M. Nakamae

BSA Technology for sub-100nm deep base bipolar transistors

H. Takemura, S. Ohi, Masataka Sugiyama et al. · 1987 · 23 citations

Engineering, Electrical Engineering, Materials Science +16

Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H+ irradiation and postannealing

Masanobu Miyao, Masanori Tanaka, Isao Tsunoda et al. · Applied Physics Letters · 2006 · 20 citations

Engineering, Materials Engineering, Materials Science +17

Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions

Dong Wang, Hiroshi Nakashima, Koji Matsumoto et al. · Applied Physics Letters · 2005 · 17 citations

Engineering, Materials Engineering, Materials Science +14

Novel LSI/SOI wafer fabrication using device layer transfer technique

Tsuneo Hamaguchi, E. Endo, M. Kimura et al. · 1985 · 16 citations

Engineering, Electrical Engineering, Materials Science +17

Enhanced stress relaxation in ultrathin SiGe-on-insulator by H+-implantation-assisted oxidation

Taizoh Sadoh, R. Matsuura, Masanobu Miyao et al. · Applied Physics Letters · 2005 · 15 citations

Engineering, Materials Engineering, Materials Science +17