Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions

Abstract

Photoluminescence (PL) was observed for three strained Si-SiGe-on-insulator wafers with different Ge fractions. The PL signals of wafers with 13% and 18% Ge fractions are deep-level free, implying high wafer qualities. A defect-related broad PL signal could be observed for a wafer with 25% Ge fraction. The dependences of the PL signals as well as the wafer’s qualities on Ge fractions were discussed in detail.