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High power operationof multiquantum well DFB lasers at 1.3 µm

DOI

13

Citations

3

References

1995

Year

T.R. Chen, P.C. Chen, J. Ungar, N. Bar-Chaim
Electronics Letters

Abstract

130 mW CW singlemode operation of an InGaAsP/InP strained multiquantum well DFB laser at 1.3 µm is reported. The laser showed low threshold current, high quantum efficiency and very good linearity.

References

YearCitations

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